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High-quality highly strained InGaAs quantum wells grown on InP using fractional monolayer superlattices
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10.1063/1.124328
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    Affiliations:
    1 Laboratoire d’Electronique, Optoélectronique et Microsystèmes (LEOM), UMR CNRS 5512, Ecole Centrale de Lyon, 69131 Ecully Cedex, France
    2 Département de Physique des Matériaux (DPM), UMR CNRS 5586, Université Lyon 1, 69662 Villeurbanne Cedex, France
    3 Laboratoire d’Electronique, Optoélectronique et Microsystèmes (LEOM), UMR CNRS 5512, Ecole Centrale de Lyon, 69131 Ecully Cedex, France
    Appl. Phys. Lett. 75, 220 (1999); http://dx.doi.org/10.1063/1.124328
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/content/aip/journal/apl/75/2/10.1063/1.124328
1999-07-12
2014-09-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-quality highly strained InGaAs quantum wells grown on InP using (InAs)n(GaAs)0.25 fractional monolayer superlattices
http://aip.metastore.ingenta.com/content/aip/journal/apl/75/2/10.1063/1.124328
10.1063/1.124328
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