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Erratum: “Evidence for relaxed and high-quality growth of GaN on SiC(0001)” [Appl. Phys. Lett. 74, 3308 (1999)]
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/content/aip/journal/apl/75/2/10.1063/1.124355
1999-07-12
2014-09-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Erratum: “Evidence for relaxed and high-quality growth of GaN on SiC(0001)” [Appl. Phys. Lett. 74, 3308 (1999)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/75/2/10.1063/1.124355
10.1063/1.124355
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