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Impurity gettering by high-energy ion implantation in silicon beyond the projected range
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10.1063/1.125298
/content/aip/journal/apl/75/22/10.1063/1.125298
http://aip.metastore.ingenta.com/content/aip/journal/apl/75/22/10.1063/1.125298
/content/aip/journal/apl/75/22/10.1063/1.125298
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/content/aip/journal/apl/75/22/10.1063/1.125298
1999-11-29
2014-10-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impurity gettering by high-energy ion implantation in silicon beyond the projected range
http://aip.metastore.ingenta.com/content/aip/journal/apl/75/22/10.1063/1.125298
10.1063/1.125298
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