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High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy
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10.1063/1.125418
/content/aip/journal/apl/75/23/10.1063/1.125418
http://aip.metastore.ingenta.com/content/aip/journal/apl/75/23/10.1063/1.125418
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/content/aip/journal/apl/75/23/10.1063/1.125418
1999-12-06
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/75/23/10.1063/1.125418
10.1063/1.125418
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