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Positive ions as growth precursors in plasma enhanced chemical vapor deposition of hydrogenated amorphous silicon
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10.1063/1.124456
/content/aip/journal/apl/75/5/10.1063/1.124456
http://aip.metastore.ingenta.com/content/aip/journal/apl/75/5/10.1063/1.124456
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/content/aip/journal/apl/75/5/10.1063/1.124456
1999-08-02
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Positive ions as growth precursors in plasma enhanced chemical vapor deposition of hydrogenated amorphous silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/75/5/10.1063/1.124456
10.1063/1.124456
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