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Phosphorus and arsenic profile control for high performance epitaxial base bipolar junction devices
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10.1063/1.124516
/content/aip/journal/apl/75/6/10.1063/1.124516
http://aip.metastore.ingenta.com/content/aip/journal/apl/75/6/10.1063/1.124516
/content/aip/journal/apl/75/6/10.1063/1.124516
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/content/aip/journal/apl/75/6/10.1063/1.124516
1999-08-09
2014-07-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Phosphorus and arsenic profile control for high performance epitaxial base bipolar junction devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/75/6/10.1063/1.124516
10.1063/1.124516
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