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Reactive molecular-beam epitaxy of GaN layers directly on 6H–SiC(0001)
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10.1063/1.124562
/content/aip/journal/apl/75/7/10.1063/1.124562
http://aip.metastore.ingenta.com/content/aip/journal/apl/75/7/10.1063/1.124562
/content/aip/journal/apl/75/7/10.1063/1.124562
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/content/aip/journal/apl/75/7/10.1063/1.124562
1999-08-16
2014-08-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reactive molecular-beam epitaxy of GaN layers directly on 6H–SiC(0001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/75/7/10.1063/1.124562
10.1063/1.124562
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