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Characteristics of dielectric layers grown on Ge by low temperature vacuum ultraviolet-assisted oxidation
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10.1063/1.124661
/content/aip/journal/apl/75/9/10.1063/1.124661
http://aip.metastore.ingenta.com/content/aip/journal/apl/75/9/10.1063/1.124661
/content/aip/journal/apl/75/9/10.1063/1.124661
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/content/aip/journal/apl/75/9/10.1063/1.124661
1999-08-30
2014-10-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristics of dielectric layers grown on Ge by low temperature vacuum ultraviolet-assisted oxidation
http://aip.metastore.ingenta.com/content/aip/journal/apl/75/9/10.1063/1.124661
10.1063/1.124661
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