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Empirical relationship between low-frequency drain current noise and grain-boundary potential barrier height in high-temperature-processed polycrystalline silicon thin-film transistors
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10.1063/1.125675
/content/aip/journal/apl/76/1/10.1063/1.125675
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/1/10.1063/1.125675
/content/aip/journal/apl/76/1/10.1063/1.125675
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/content/aip/journal/apl/76/1/10.1063/1.125675
2000-01-03
2014-09-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Empirical relationship between low-frequency drain current noise and grain-boundary potential barrier height in high-temperature-processed polycrystalline silicon thin-film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/1/10.1063/1.125675
10.1063/1.125675
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