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Recombination dynamics of carriers in an InGaN/AlGaN single-quantum-well light-emitting diode under reverse-bias voltages
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10.1063/1.126091
/content/aip/journal/apl/76/12/10.1063/1.126091
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/12/10.1063/1.126091
/content/aip/journal/apl/76/12/10.1063/1.126091
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/content/aip/journal/apl/76/12/10.1063/1.126091
2000-03-20
2014-10-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Recombination dynamics of carriers in an InGaN/AlGaN single-quantum-well light-emitting diode under reverse-bias voltages
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/12/10.1063/1.126091
10.1063/1.126091
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