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Transient-enhanced diffusion of boron implanted at ultralow energies in silicon: Localization of the source
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10.1063/1.126578
/content/aip/journal/apl/76/21/10.1063/1.126578
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/21/10.1063/1.126578
/content/aip/journal/apl/76/21/10.1063/1.126578
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/content/aip/journal/apl/76/21/10.1063/1.126578
2000-05-22
2014-11-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transient-enhanced diffusion of boron implanted at ultralow energies in silicon: Localization of the source
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/21/10.1063/1.126578
10.1063/1.126578
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