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Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy
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10.1063/1.126588
/content/aip/journal/apl/76/22/10.1063/1.126588
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/22/10.1063/1.126588
/content/aip/journal/apl/76/22/10.1063/1.126588
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/content/aip/journal/apl/76/22/10.1063/1.126588
2000-05-29
2015-08-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/22/10.1063/1.126588
10.1063/1.126588
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