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Room-temperature lasing via ground state of current-injected vertically aligned InP/GaInP quantum dots
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10.1063/1.126642
/content/aip/journal/apl/76/23/10.1063/1.126642
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/23/10.1063/1.126642
/content/aip/journal/apl/76/23/10.1063/1.126642
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/content/aip/journal/apl/76/23/10.1063/1.126642
2000-06-05
2014-09-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room-temperature lasing via ground state of current-injected vertically aligned InP/GaInP quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/23/10.1063/1.126642
10.1063/1.126642
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