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Quantification of excess vacancy defects from high-energy ion implantation in Si by Au labeling
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12.We have evidence that the shoulder is also due to vacancies. For example, the Au concentration in the shoulder decreases when the energy of the +I implant is reduced to 350 keV so that some of the interstitials can escape annihilation at the This shoulder was not seen in samples without a HEl. Quantitative findings regarding this shoulder peak will be reported in a more detailed paper to be submitted later.
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