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Quantification of excess vacancy defects from high-energy ion implantation in Si by Au labeling
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10.1063/1.126653
/content/aip/journal/apl/76/23/10.1063/1.126653
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/23/10.1063/1.126653
/content/aip/journal/apl/76/23/10.1063/1.126653
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/content/aip/journal/apl/76/23/10.1063/1.126653
2000-06-05
2014-09-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantification of excess vacancy defects from high-energy ion implantation in Si by Au labeling
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/23/10.1063/1.126653
10.1063/1.126653
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