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Substitutional carbon incorporation during growth on Si(100) by molecular-beam epitaxy: Dependence on germanium and carbon
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10.1063/1.126702
/content/aip/journal/apl/76/24/10.1063/1.126702
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/24/10.1063/1.126702
/content/aip/journal/apl/76/24/10.1063/1.126702
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/content/aip/journal/apl/76/24/10.1063/1.126702
2000-06-12
2014-11-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Substitutional carbon incorporation during Si1−x−yGexCy growth on Si(100) by molecular-beam epitaxy: Dependence on germanium and carbon
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/24/10.1063/1.126702
10.1063/1.126702
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