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/content/aip/journal/apl/76/26/10.1063/1.126850
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/content/aip/journal/apl/76/26/10.1063/1.126850
2000-06-26
2016-08-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=apl.aip.org/76/26/10.1063/1.126850&pageURL=http://scitation.aip.org/content/aip/journal/apl/76/26/10.1063/1.126850'
x100,x101,x102,x103,
Position1,Position2,Position3,
Right1,Right2,Right3,