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Effect of dopant atoms on the roughness of III–V semiconductor cleavage surfaces
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10.1063/1.125726
/content/aip/journal/apl/76/3/10.1063/1.125726
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/3/10.1063/1.125726
/content/aip/journal/apl/76/3/10.1063/1.125726
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/content/aip/journal/apl/76/3/10.1063/1.125726
2000-01-17
2014-11-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of dopant atoms on the roughness of III–V semiconductor cleavage surfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/3/10.1063/1.125726
10.1063/1.125726
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