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The dependence of arsenic transient enhanced diffusion on the silicon substrate temperature during ultralow energy implantation
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10.1063/1.125820
/content/aip/journal/apl/76/5/10.1063/1.125820
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/5/10.1063/1.125820
/content/aip/journal/apl/76/5/10.1063/1.125820
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/content/aip/journal/apl/76/5/10.1063/1.125820
2000-01-31
2014-08-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The dependence of arsenic transient enhanced diffusion on the silicon substrate temperature during ultralow energy implantation
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/5/10.1063/1.125820
10.1063/1.125820
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