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A full-band Monte Carlo model for the temperature dependence of electron and hole transport in silicon
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10.1063/1.125824
/content/aip/journal/apl/76/5/10.1063/1.125824
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/5/10.1063/1.125824
/content/aip/journal/apl/76/5/10.1063/1.125824
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/content/aip/journal/apl/76/5/10.1063/1.125824
2000-01-31
2014-11-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A full-band Monte Carlo model for the temperature dependence of electron and hole transport in silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/5/10.1063/1.125824
10.1063/1.125824
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