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Investigation of vertical transport in n-GaN films grown by molecular beam epitaxy using Schottky barrier diodes
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10.1063/1.125933
/content/aip/journal/apl/76/8/10.1063/1.125933
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/8/10.1063/1.125933
/content/aip/journal/apl/76/8/10.1063/1.125933
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/content/aip/journal/apl/76/8/10.1063/1.125933
2000-02-21
2014-09-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of vertical transport in n-GaN films grown by molecular beam epitaxy using Schottky barrier diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/8/10.1063/1.125933
10.1063/1.125933
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