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Effect of hydrogen etching on 6H SiC surface morphology studied by reflection high-energy positron diffraction and atomic force microscopy
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10.1063/1.125957
/content/aip/journal/apl/76/9/10.1063/1.125957
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/9/10.1063/1.125957
/content/aip/journal/apl/76/9/10.1063/1.125957
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/content/aip/journal/apl/76/9/10.1063/1.125957
2000-02-28
2014-08-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of hydrogen etching on 6H SiC surface morphology studied by reflection high-energy positron diffraction and atomic force microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/76/9/10.1063/1.125957
10.1063/1.125957
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