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Temperature dependence of the transition from two-dimensional to three-dimensional growth of Ge on (001)Si studied by reflection high-energy electron diffraction
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10.1063/1.1290720
/content/aip/journal/apl/77/10/10.1063/1.1290720
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/10/10.1063/1.1290720
/content/aip/journal/apl/77/10/10.1063/1.1290720
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/content/aip/journal/apl/77/10/10.1063/1.1290720
2000-09-04
2014-11-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependence of the transition from two-dimensional to three-dimensional growth of Ge on (001)Si studied by reflection high-energy electron diffraction
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/10/10.1063/1.1290720
10.1063/1.1290720
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