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On the use of total reflection x-ray topography for the observation of misfit dislocation strain at the surface of a Si/Ge–Si heterostructure
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10.1063/1.1308269
/content/aip/journal/apl/77/11/10.1063/1.1308269
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/11/10.1063/1.1308269
/content/aip/journal/apl/77/11/10.1063/1.1308269
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/content/aip/journal/apl/77/11/10.1063/1.1308269
2000-09-11
2015-03-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On the use of total reflection x-ray topography for the observation of misfit dislocation strain at the surface of a Si/Ge–Si heterostructure
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/11/10.1063/1.1308269
10.1063/1.1308269
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