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Two-step growth of high-quality GaN by hydride vapor-phase epitaxy
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10.1063/1.1311600
/content/aip/journal/apl/77/12/10.1063/1.1311600
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/12/10.1063/1.1311600
/content/aip/journal/apl/77/12/10.1063/1.1311600
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/content/aip/journal/apl/77/12/10.1063/1.1311600
2000-09-18
2014-07-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Two-step growth of high-quality GaN by hydride vapor-phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/12/10.1063/1.1311600
10.1063/1.1311600
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