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Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures
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10.1063/1.1318726
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    Affiliations:
    1 Department of Electrical and Computer Engineering, University of California–Santa Barbara, Santa Barbara, California 93106
    2 Department of Materials Science, University of California–Santa Barbara, Santa Barbara, California 93106
    3 Department of Electrical and Computer Engineering and Department of Materials Science, University of California–Santa Barbara, Santa Barbara, California 93106
    4 Department of Electrical and Computer Engineering, University of California–Santa Barbara, Santa Barbara, California 93106
    5 Department of Electrical and Computer Engineering and Department of Materials Science, University of California–Santa Barbara, Santa Barbara, California 93106
    Appl. Phys. Lett. 77, 2610 (2000); http://dx.doi.org/10.1063/1.1318726
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/content/aip/journal/apl/77/16/10.1063/1.1318726
2000-10-16
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/16/10.1063/1.1318726
10.1063/1.1318726
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