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Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells
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10.1063/1.1323542
/content/aip/journal/apl/77/19/10.1063/1.1323542
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/19/10.1063/1.1323542
/content/aip/journal/apl/77/19/10.1063/1.1323542
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/content/aip/journal/apl/77/19/10.1063/1.1323542
2000-11-06
2014-09-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/19/10.1063/1.1323542
10.1063/1.1323542
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