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Rapid construction of a phase diagram of doped Mott insulators with a composition-spread approach
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10.1063/1.1326847
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    Affiliations:
    1 Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan
    2 Joint Research Center for Atom Technology (JRCAT), Tsukuba 305-0046, Japan
    3 Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
    4 Joint Research Center for Atom Technology (JRCAT), Tsukuba 305-0046, and
    5 Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan
    6 Frontier Collaborative Research Center, and Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
    Appl. Phys. Lett. 77, 3426 (2000); http://dx.doi.org/10.1063/1.1326847
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/content/aip/journal/apl/77/21/10.1063/1.1326847
2000-11-20
2014-11-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Rapid construction of a phase diagram of doped Mott insulators with a composition-spread approach
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/21/10.1063/1.1326847
10.1063/1.1326847
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