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Comparative study of GaN and AlN nucleation layers and their role in growth of GaN on sapphire by metalorganic chemical vapor deposition
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10.1063/1.1328091
/content/aip/journal/apl/77/21/10.1063/1.1328091
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/21/10.1063/1.1328091
/content/aip/journal/apl/77/21/10.1063/1.1328091
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/content/aip/journal/apl/77/21/10.1063/1.1328091
2000-11-20
2014-10-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparative study of GaN and AlN nucleation layers and their role in growth of GaN on sapphire by metalorganic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/21/10.1063/1.1328091
10.1063/1.1328091
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