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Nanoscale selective-area epitaxial growth of Si using an ultrathin mask patterned by an atomic force microscope
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10.1063/1.1331078
/content/aip/journal/apl/77/24/10.1063/1.1331078
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/24/10.1063/1.1331078
/content/aip/journal/apl/77/24/10.1063/1.1331078
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/content/aip/journal/apl/77/24/10.1063/1.1331078
2000-12-11
2015-08-03
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanoscale selective-area epitaxial growth of Si using an ultrathin SiO2/Si3Ni4 mask patterned by an atomic force microscope
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/24/10.1063/1.1331078
10.1063/1.1331078
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