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Erratum: “Biexciton emission from high-quality ZnO films grown on epitaxial GaN by plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 77, 537 (2000)]
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/content/aip/journal/apl/77/25/10.1063/1.1333406
2000-12-18
2014-12-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Erratum: “Biexciton emission from high-quality ZnO films grown on epitaxial GaN by plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 77, 537 (2000)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/25/10.1063/1.1333406
10.1063/1.1333406
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