Full text loading...
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Correlation of mobile and fixed charge creation in protonated field-effect transistors
1.K. Vanheusden, W. L. Warren, R. A. B. Devine, D. M. Fleetwood, J. R. Schwank, M. R. Shaneyfelt, P. S. Winokur, and Z. J. Lemnios, Nature (London) 356, 587 (1997).
2.Separation by implantation of oxygen—a process by which a buried layer is created via high dose implantation of oxygen into a Si wafer followed by extended annealing at temperatures ∼1320 °C.
3.Trade name of a bonded wafer/smart cut technique developed by SOITEC S.A., Parc Technologique des Fontaines, 38926 Crolles Cedex, France.
4.S. Cristoloveanu and S. Li Sheng, Electrical Characterization of Silicon-On-Insulator Materials and Devices (Kluwer, New York, 1995).
5.N. F. M. Devine, J. Robertson, V. Girault, and R. A. B. Devine, Phys. Rev. B 61, 15565 (2000).
6.V. Girault and R. A. B. Devine (unpublished).
7.K. Vanheusden and R. A. B. Devine, Appl. Phys. Lett. 76, 3109 (2000).
8.S. M. Sze, The Physics of Semiconductor Devices (Wiley, New York, 1981), Chap. 8, p. 440.
Article metrics loading...