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Gain in 1.3 μm materials: InGaNAs and InGaPAs semiconductor quantum-well lasers
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10.1063/1.127067
/content/aip/journal/apl/77/5/10.1063/1.127067
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/5/10.1063/1.127067
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/content/aip/journal/apl/77/5/10.1063/1.127067
2000-07-31
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gain in 1.3 μm materials: InGaNAs and InGaPAs semiconductor quantum-well lasers
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/5/10.1063/1.127067
10.1063/1.127067
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