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Dependence of crystallographic tilt and defect distribution on mask material in epitaxial lateral overgrown GaN layers
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10.1063/1.127069
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    Affiliations:
    1 Environment and Analysis Technology Department, Technical Support Center, Sony Corporation, 2-1-1, Shin-Sakuragaoka, Hodogaya, Yokohama 240-0036, Japan
    2 Semiconductor Laser Division, Semiconductor Company, Core Technology and Network Company, Sony Corporation, 2-1-1, Shin-Sakuragaoka, Hodogaya, Yokohama 240-0036, Japan
    3 Development Center, Sony Shiroishi Semiconductor Inc., 3-53-2 Shiratori, Shiroishi-shi, Miyagai-ken 989-0734, Japan
    Appl. Phys. Lett. 77, 636 (2000); http://dx.doi.org/10.1063/1.127069
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/content/aip/journal/apl/77/5/10.1063/1.127069
2000-07-31
2014-07-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dependence of crystallographic tilt and defect distribution on mask material in epitaxial lateral overgrown GaN layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/5/10.1063/1.127069
10.1063/1.127069
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