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Effect of oxidation method and post-oxidation annealing on interface properties of metal–oxide–semiconductor structures formed on n-type 4H-SiC face
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10.1063/1.1306649
/content/aip/journal/apl/77/6/10.1063/1.1306649
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/6/10.1063/1.1306649
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/content/aip/journal/apl/77/6/10.1063/1.1306649
2000-08-07
2014-09-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of oxidation method and post-oxidation annealing on interface properties of metal–oxide–semiconductor structures formed on n-type 4H-SiC C(0001̄) face
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/6/10.1063/1.1306649
10.1063/1.1306649
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