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Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy
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10.1063/1.1306657
/content/aip/journal/apl/77/6/10.1063/1.1306657
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/6/10.1063/1.1306657
/content/aip/journal/apl/77/6/10.1063/1.1306657
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/content/aip/journal/apl/77/6/10.1063/1.1306657
2000-08-07
2014-08-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/6/10.1063/1.1306657
10.1063/1.1306657
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