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Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon
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10.1063/1.1289062
/content/aip/journal/apl/77/7/10.1063/1.1289062
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/7/10.1063/1.1289062
/content/aip/journal/apl/77/7/10.1063/1.1289062
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/content/aip/journal/apl/77/7/10.1063/1.1289062
2000-08-14
2014-09-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/77/7/10.1063/1.1289062
10.1063/1.1289062
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