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In situ analysis of the room-temperature epitaxial growth of ultrathin films on Si (111) by coaxial impact-collision ion scattering spectroscopy
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10.1063/1.1356451
/content/aip/journal/apl/78/13/10.1063/1.1356451
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/13/10.1063/1.1356451
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/content/aip/journal/apl/78/13/10.1063/1.1356451
2001-03-26
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ analysis of the room-temperature epitaxial growth of CeO2 ultrathin films on Si (111) by coaxial impact-collision ion scattering spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/13/10.1063/1.1356451
10.1063/1.1356451
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