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Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on substrates by wafer bonding
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10.1063/1.1359140
/content/aip/journal/apl/78/15/10.1063/1.1359140
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/15/10.1063/1.1359140
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/content/aip/journal/apl/78/15/10.1063/1.1359140
2001-04-09
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/15/10.1063/1.1359140
10.1063/1.1359140
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