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Formation of a structure at by use of perchloric acid
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10.1063/1.1364510
/content/aip/journal/apl/78/16/10.1063/1.1364510
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/16/10.1063/1.1364510
/content/aip/journal/apl/78/16/10.1063/1.1364510
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/content/aip/journal/apl/78/16/10.1063/1.1364510
2001-04-16
2014-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of a SiO2/SiC structure at 203 °C by use of perchloric acid
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/16/10.1063/1.1364510
10.1063/1.1364510
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