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Effects of rapid thermal annealing and encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy
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10.1063/1.1367276
/content/aip/journal/apl/78/17/10.1063/1.1367276
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/17/10.1063/1.1367276
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/content/aip/journal/apl/78/17/10.1063/1.1367276
2001-04-23
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/17/10.1063/1.1367276
10.1063/1.1367276
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