No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Phase-transition-induced residual strain in ferromagnetic MnAs films epitaxially grown on GaAs(001)
1.X. W. Li, A. Gupta, and G. Xiao, Appl. Phys. Lett. 75, 713 (1999).
2.Q. Gan, R. A. Rao, C. B. Eom, J. L. Garrett, and M. Lee, Appl. Phys. Lett. 72, 978 (1998).
3.B. T. M. Willis and H. P. Rooksby, Proc. Phys. Soc. London, Sect. B 67, 290 (1954).
4.C. P. Bean and D. S. Rodbell, Phys. Rev. 126, 104 (1962).
5.V. A. Chernenko, L. Wee, P. G. McCormick, and R. Street, J. Appl. Phys. 85, 7833 (1999).
6.F. Schippan, A. Trampert, L. Däweritz, K. H. Ploog, B. Dennis, K. U. Neumann, and K. R. A. Ziebeck, J. Cryst. Growth 201/202, 674 (1999).
7.Powder Diffraction File, ICCD, Swarthsmoor, PA, No. PDF 280644.
8.This assumption is based on the fact that we have measured no thickness-dependent dislocation distance (residual strain) in samples with layer thickness between 2 and 150 nm.
9.D. Hull and D. J. Bacon, Introduction to Dislocations (Pergamon, Oxford, UK, 1984).
Article metrics loading...
Full text loading...
Most read this month
Most cited this month