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Chirp reduction in semiconductor lasers through injection current patterning
1.P. Colet, C. R. Mirasso, and M. San Miguel, IEEE J. Quantum Electron. QE-29, 1624 (1993).
2.For a most recent example, cf. S. Riyopoulos, Appl. Phys. Lett. 75, 3057 (1999).
3.G. L. Lippi, S. Barland, N. Dokhane, F. Monsieur, P. A. Porta, H. Grassi, and L. M. Hoffer, J. Opt. B: Quantum Semiclass. Opt. 2, 375 (2000).
4.R. Olshanski and D. Fye, Electron. Lett. 20, 928 (1984);
4.L. Bickers and L. D. Westbrook, IEE Proc.-J: Optoelectron. 133, 155 (1986).
5.The optimal choice is obtained as follows (see Ref. 10): we choose the highest (reasonable) current value for steps and and slightly positive values for and to prevent junction reverse biasing (cf. Figs. 1 and 2 for definitions). This way, the duration of each step for a successful elimination of RO is fixed (as can be best seen by representing the trajectories in the plane S vs N).
6.K. Petermann Laser Diode Modulation and Noise (Kluwer, Dordrecht, 1988).
7.D. M. Byrne, J. Lightwave Technol. LT-10, 1087 (1992).
8.We will consider the laser biased above threshold, but similar spectral improvements can be obtained when the laser is biased below threshold.
9.Current technology allows for the realization of direct current fronts with 15 ps rise time. The non-negligible duration of the transition time, compared to the abrupt numerical one, can easily be compensated for by an adequate modification of step heights and durations (cf. Ref. 10).
10.N. Dokhane, Ph. D. thesis, Université de Nice-Sophia Antipolis, France, September 2000 (in French).
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