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Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal–oxide–semiconductor field-effect transistors
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10.1063/1.1379786
/content/aip/journal/apl/78/25/10.1063/1.1379786
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/25/10.1063/1.1379786
/content/aip/journal/apl/78/25/10.1063/1.1379786
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/content/aip/journal/apl/78/25/10.1063/1.1379786
2001-06-18
2014-09-15
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal–oxide–semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/25/10.1063/1.1379786
10.1063/1.1379786
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