1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy
Rent:
Rent this article for
USD
10.1063/1.1380399
/content/aip/journal/apl/78/26/10.1063/1.1380399
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/26/10.1063/1.1380399
/content/aip/journal/apl/78/26/10.1063/1.1380399
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/78/26/10.1063/1.1380399
2001-06-25
2014-08-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/26/10.1063/1.1380399
10.1063/1.1380399
SEARCH_EXPAND_ITEM