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Evidence of isoelectronic traps in molecular beam epitaxy grown Temperature- and pressure-dependent photoluminescence studies
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10.1063/1.1381039
/content/aip/journal/apl/78/26/10.1063/1.1381039
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/26/10.1063/1.1381039
/content/aip/journal/apl/78/26/10.1063/1.1381039
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/content/aip/journal/apl/78/26/10.1063/1.1381039
2001-06-25
2014-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evidence of isoelectronic traps in molecular beam epitaxy grown Zn1−xBexSe: Temperature- and pressure-dependent photoluminescence studies
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/26/10.1063/1.1381039
10.1063/1.1381039
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