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Erratum: “Transport properties of thin films grown by metalorganic chemical vapor deposition” [Appl. Phys. Lett. 77, 3794 (2000)]
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/content/aip/journal/apl/78/4/10.1063/1.1346587
2001-01-22
2014-12-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Erratum: “Transport properties of GaAs1−xNx thin films grown by metalorganic chemical vapor deposition” [Appl. Phys. Lett. 77, 3794 (2000)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/4/10.1063/1.1346587
10.1063/1.1346587
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