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Ultralarge capacitance–voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted electron beam deposition
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10.1063/1.1337618
/content/aip/journal/apl/78/7/10.1063/1.1337618
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/7/10.1063/1.1337618
/content/aip/journal/apl/78/7/10.1063/1.1337618
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/content/aip/journal/apl/78/7/10.1063/1.1337618
2001-02-12
2014-10-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultralarge capacitance–voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted electron beam deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/7/10.1063/1.1337618
10.1063/1.1337618
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