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Hole-trapping-related transients in shallow junctions fabricated in a high-energy boron-implanted p well
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10.1063/1.1342041
/content/aip/journal/apl/78/7/10.1063/1.1342041
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/7/10.1063/1.1342041
/content/aip/journal/apl/78/7/10.1063/1.1342041
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/content/aip/journal/apl/78/7/10.1063/1.1342041
2001-02-12
2014-08-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hole-trapping-related transients in shallow n+–p junctions fabricated in a high-energy boron-implanted p well
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/7/10.1063/1.1342041
10.1063/1.1342041
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