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The effect of topographical local charging on the etching of deep-submicron structures in as a function of aspect ratio
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10.1063/1.1347021
/content/aip/journal/apl/78/7/10.1063/1.1347021
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/7/10.1063/1.1347021
/content/aip/journal/apl/78/7/10.1063/1.1347021
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/content/aip/journal/apl/78/7/10.1063/1.1347021
2001-02-12
2015-05-04
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effect of topographical local charging on the etching of deep-submicron structures in SiO2 as a function of aspect ratio
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/7/10.1063/1.1347021
10.1063/1.1347021
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