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Kelvin probe force microscopy on InAs thin films grown on GaAs giant step structures formed on (110) GaAs vicinal substrates
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10.1063/1.1348318
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    Affiliations:
    1 Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan
    2 Semiconductors Laboratory, The Institute of Physical and Chemical Research, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
    3 Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan
    Appl. Phys. Lett. 78, 1086 (2001); http://dx.doi.org/10.1063/1.1348318
/content/aip/journal/apl/78/8/10.1063/1.1348318
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/8/10.1063/1.1348318
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/content/aip/journal/apl/78/8/10.1063/1.1348318
2001-02-19
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Kelvin probe force microscopy on InAs thin films grown on GaAs giant step structures formed on (110) GaAs vicinal substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/8/10.1063/1.1348318
10.1063/1.1348318
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